60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. L.

Dual N-Channel Enhancement Mode Field Effect Transistor

CEM6088

CEM6080

CEM6086

CEM6086L

CEM6056

CEM6056L

CEM6186

CEM6188

CEM6200

CEM6338

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